• GeneSiC Semiconductor
• G2R120MT33J
• Discrete Semiconductor Products
• SIC MOSFET N-CH TO263-7
•  G2R120MT33J Datasheet
• 

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• AttributesAttribute Value
• ManufacturerGeneSiC Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 3300 V 35A Surface Mount TO-263-7
• Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C35A
• Rds On (Max) @ Id, Vgs156mOhm @ 20A, 20V
• Supplier Device PackageTO-263-7
• Drive Voltage (Max Rds On, Min Rds On)20V
• Vgs (Max)+25V, -10V
• Drain to Source Voltage (Vdss)3300 V
• Gate Charge (Qg) (Max) @ Vgs145 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds3706 pF @ 1000 V

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• QUOTE
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• QC PROCESS
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