• Fairchild Semiconductor
• FQI4N90TU
• Discrete Semiconductor Products
• POWER FIELD-EFFECT TRANSISTOR, 4
•  FQI4N90TU Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerFairchild Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity254
• DescriptionN-Channel 900 V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole I2PAK (TO-262)
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
• Rds On (Max) @ Id, Vgs3.3Ohm @ 2.1A, 10V
• Power Dissipation (Max)3.13W (Ta), 140W (Tc)
• Vgs(th) (Max) @ Id5V @ 250µA
• Supplier Device PackageI2PAK (TO-262)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)900 V
• Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V

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• RFQ
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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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