Nexperia announced its first silicon carbide (SiC) MOSFETs to match the needs of the electric vehicle market. The first in a series of planned releases are two 1200V discrete devices NSF040120L3A0 and NSF080120L3A0, packaged in 3-pin TO247 and with RDS(on) values of 40 mΩ and 80 mΩ respectively. It will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of RDS(on) values in a choice of through-hole and surface mounted packages.
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Source: Nexperia
This release addresses the market demand for the increased availability of high-performance SiC MOSFETs in industrial applications including electric vehicle (EV) charging piles, uninterruptible power supplies (UPS), and inverters for solar and energy storage systems (ESS).
RDS(on) is a critical performance parameter for SiC MOSFETs as it will affect the conduction power loss. While it is the reason that limits the performance of the most available SiC devices currently on the market. Nexperia identified that and used its innovative process technology to ensure its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C.
Nexperia’s SiC MOSFETs exhibit the very low total gate charge (QG) , which brings the advantage of ower gate drive losses. Besides, Nexperia balances the gate charge to have a meager ratio of QGD to QGS, which further improves the device's immunity to parasitic turn-on.
Together with the positive temperature coefficient of SiC MOSFETs, Nexperia’s SiC MOSFETs offers also ultra-low spread in device-to-device threshold voltage, VGS(the). When the devices are operated in parallel, it allows very well-balanced current-carrying performance under static and dynamic conditions. Furthermore, low body diode forward voltage (VSD) is a parameter that increases device robustness and efficiency, while also relaxing the dead-time requirement for asynchronous rectification and freewheel operation.
“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers”, according to Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia. “Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years”.
The NSF040120L3A0 and NSF080120L3A0 are available in production quantities now. Nexperia is also about to release automotive grade-MOSFETs in the future.