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Vishay 30V Symmetric Dual MOSFETs Achieve 98% Efficiency and Simplify Design

Jan 30 2023

Vishay introduces two new 30V symmetrical dual-channel n-channel power MOSFETs, SiZF5300DT and SiZF5302DT, which help simplify design and save PCB space required for space-based devices.

Vishay Siliconix SiZF5300DT and SiZF5302DT combine high-side and low-side TrenchFET® Gen V MOSFETs in a 3.3 mm x 3.3 mm PowerPAIR® 3x3FS monolithic package. Can be used to replace two discrete devices in a PowerPAK 1212 package, saving 50% of board space while occupying a 63% smaller footprint than a PowerPAIR 6x5F packaged dual MOSFET.

PowerPAIR 3x3FS package

Both MOSFETs are suitable for power conversion in computing and communication applications, offering space savings to designers of synchronous buck converters, point-of-load conversion circuits, and DC/DC modules for USB-C power notebooks, servers, DC cooling fans, and communication equipment solutions. The SiZF5302DT high- and low-side MOSFETs deliver a premium effect of 50% duty cycle and excellent energy efficiency at currents from 1A to 4A. The SiZF5300DT is an ideal solution for heavy loads from 12 A to 15 A.

Both MOSFETs utilize 30V Gen V technology for excellent on-resistance and gate charge. Typical gate charges at 4.5 V for the two MOSFETs are 9.5 nC and 6.7 nC, respectively. The typical on-resistance of the SiZF5300DT is 2.02 mW and 2.93 mW at 10 V and 4.5 V, respectively. Under the same conditions, the SiZF5302DT on-resistance is 2.7 mW and 4.4 mW, respectively. The figure of merit (FOM), which is the product of gate charge and ultra-low on-resistance, is important for MOSFET power conversion applications. 35% lower than previous-generation solutions with similar lead-through owners. The high-frequency switching application efficiency is increased by 2%, and the energy efficiency of 100 W reaches 98%.

The device uses flip-chip technology to enhance heat dissipation, and a unique pin configuration helps simplify PCB layout and supports shortened switching loops, thereby reducing parasitic inductance. The SiZF5300DT and SiZF5302DT are 100% Rg and UIS tested, RoHS compliant, and halogen-free.

Industry New Product Dynamics

Infineon Mosfet: Infineon has launched a new 3.3 x 3.3 mm2 PQFN package source bottom power MOSFET, the voltage range covers 25-150 V, and there are two different structures of bottom cooling (BSC) and double side cooling (DSC).

Renesas Electronics has launched the RAJ2810024H12HPD, a new automotive-grade smart power device that enables safe and flexible power distribution in next-generation E/E architectures.

NXP has launched a new 28nm RFCMOS radar single-chip family for next-generation ADAS and autonomous driving systems.

Microchip introduces the MIC69303RT 3A low-dropout (LDO) regulator, the first commercial-off-the-shelf radiation-tolerant power device designed for low-Earth orbit and other space applications.

Samsung Electronics Launches ISOCELL HP2, Its Latest 200-Megapixel (200MP) Image Sensor

Vishay Introduces Two New Seventh Generation 1200V FRED Pt Hyperfast Recovery Rectifiers, VS-E7MH0112-M3 and VS-E7MH0112HM3


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