• YAGEO XSEMI
• XP65SL380DH
• Discrete Semiconductor Products
• MOSFET N-CH 650V 10A TO252
•  XP65SL380DH Datasheet
• 

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• AttributesAttribute Value
• ManufacturerYAGEO XSEMI
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionN-Channel 650 V 10A (Tc) 2W (Ta), 78.1W (Tc) Surface Mount TO-252
• Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C10A (Tc)
• Rds On (Max) @ Id, Vgs380mOhm @ 3.2A, 10V
• Power Dissipation (Max)2W (Ta), 78.1W (Tc)
• Vgs(th) (Max) @ Id5V @ 250µA
• Supplier Device PackageTO-252
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs52.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1860 pF @ 100 V

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