• IR (Infineon Technologies)
• IPU80R1K4P7AKMA1
• Discrete Semiconductor Products
• MOSFET N-CH 800V 4A TO251-3
•  IPU80R1K4P7AKMA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity75
• DescriptionN-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3-21
• Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C4A (Tc)
• Rds On (Max) @ Id, Vgs1.4Ohm @ 1.4A, 10V
• Power Dissipation (Max)32W (Tc)
• Vgs(th) (Max) @ Id3.5V @ 700µA
• Supplier Device PackagePG-TO251-3-21
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)800 V
• Gate Charge (Qg) (Max) @ Vgs10.05 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds250 pF @ 500 V

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