• IR (Infineon Technologies)
• IPP060N06NAKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 60V 17A/45A TO220-3
•  IPP060N06NAKSA1 Datasheet
• 

• Cost Reduction
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• 365 Days Warranty
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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 60 V 17A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Through Hole PG-TO220-3
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C17A (Ta), 45A (Tc)
• Rds On (Max) @ Id, Vgs6mOhm @ 45A, 10V
• Power Dissipation (Max)3W (Ta), 83W (Tc)
• Vgs(th) (Max) @ Id2.8V @ 36µA
• Supplier Device PackagePG-TO220-3
• Drive Voltage (Max Rds On, Min Rds On)6V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)60 V
• Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 30 V

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