• IR (Infineon Technologies)
• IRF5305LPBF
• Discrete Semiconductor Products
• MOSFET P-CH 55V 31A TO262
•  IRF5305LPBF Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionP-Channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeP-Channel
• Current - Continuous Drain (Id) @ 25°C31A (Tc)
• Rds On (Max) @ Id, Vgs60mOhm @ 16A, 10V
• Power Dissipation (Max)3.8W (Ta), 110W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-262
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)55 V
• Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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